BDW54, BDW54a, BDW54b, BDW54c, BDW54d pnp silicon power darlingtons
1 august 1978 - revised september 2002 specifications are subject to change without notice. designed for complementary use with bdw53, bdw53a, bdw53b, bdw53c and bdw53d 40 w at 25c case temperature 4 a continuous collector current minimum h fe of 750 at 3 v, 1.5 a b c e to-220 package (top view) pin 2 is in electrical contact with the mounting base. mdtraca 1 2 3 absolute maximum ratings at 25c case temperature (unless otherwise noted) notes: 1. these values apply when the base-emitter diode is open circuited. 2. derate linearly to 150c case temperature at the rate of 0.32 w/c. 3. derate linearly to 150c free air temperature at the rate of 16 mw/c. 4. this rating is based on the capability of the transistor to operate safely in a circuit of: l = 20 mh, i b(on) = -5 ma, r be = 100 ? , v be(off) = 0, r s = 0.1 ? , v cc = -20 v. rating symbol value unit collector-base voltage (i e = 0) BDW54 BDW54a BDW54b BDW54c BDW54d v cbo -45 -60 -80 -100 -120 v collector-emitter voltage (i b = 0) (see note 1) BDW54 BDW54a BDW54b BDW54c BDW54d v ceo -45 -60 -80 -100 -120 v emitter-base voltage v ebo -5 v continuous collector current i c -4 a continuous base current i b -50 ma continuous device dissipation at (or below) 25c case temperature (see note 2) p tot 40 w continuous device dissipation at (or below) 25c free air temperature (see note 3) p tot 2w unclamped inductive load energy (see note 4) ?li c 2 25 mj operating junction temperature range t j -65 to +150 c operating temperature range t stg -65 to +150 c operating free-air temperature range t a -65 to +150 c
BDW54, BDW54a, BDW54b, BDW54c, BDW54d pnp silicon power darlingtons 2
august 1978 - revised september 2002 specifications are subject to change without notice. notes: 5. these parameters must be measured using pulse techniques, t p = 300 s, duty cycle 2%. 6. these parameters must be measured using voltage-sensing contacts, separate from the current carrying conta cts. ? voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25c case temperature (unless otherwise noted) parameter test conditions min typ max unit v (br)ceo collector-emitter breakdown voltage i c = -30 ma i b = 0 (see note 5) BDW54 BDW54a BDW54b BDW54c BDW54d -45 -60 -80 -100 -120 v i ceo collector-emitter cut-off current v ce = -30 v v ce = -30 v v ce = -40 v v ce = -50 v v ce = -60 v i b =0 i b =0 i b =0 i b =0 i b =0 BDW54 BDW54a BDW54b BDW54c BDW54d -0.5 -0.5 -0.5 -0.5 -0.5 ma i cbo collector cut-off current v cb = -45 v v cb = -60 v v cb = -80 v v cb = -100 v v cb = -120 v v cb = -45 v v cb = -60 v v cb = -80 v v cb = -100 v v cb = -120 v i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 t c = 150c t c = 150c t c = 150c t c = 150c t c = 150c BDW54 BDW54a BDW54b BDW54c BDW54d BDW54 BDW54a BDW54b BDW54c BDW54d -0.2 -0.2 -0.2 -0.2 -0.2 -5 -5 -5 -5 -5 ma i ebo emitter cut-off current v eb = -5 v i c =0 -2 ma h fe forward current transfer ratio v ce = -3 v v ce = -3 v i c = -1.5 a i c = -4 a (see notes 5 and 6) 750 100 20000 v be(on) base-emitter voltage v ce = -3 v i c = -1.5 a (see notes 5 and 6) -2.5 v v ce(sat) collector-emitter saturation voltage i b = -30 ma i b = -40 ma i c = -1.5 a i c = -4 a (see notes 5 and 6) -2.5 -4 v v ec parallel diode forward voltage i e = -4 a i b = 0 -3.5 v thermal characteristics parameter min typ max unit r jc junction to case thermal resistance 3.125 c/w r ja junction to free air thermal resistance 62.5 c/w resistive-load-switching characteristics at 25c case temperature parameter test conditions ? min typ max unit t on tu r n - o n t i m e i c = -2 a v be(off) = 5 v i b(on) = -8 ma r l = 15 ? i b(off) = 8 ma t p = 20 s, dc 2% 1s t off turn-off time 4.5 s
BDW54, BDW54a, BDW54b, BDW54c, BDW54d pnp silicon power darlingtons 3
august 1978 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 1. figure 2. figure 3. typical dc current gain vs collector current i c - collector current - a -05 -50 -10 h fe - typical dc current gain 20000 100 1000 10000 tcs115ad t c = -40c t c = 25c t c = 100c v ce = -3 v t p = 300 s, duty cycle < 2% collector-emitter saturation voltage vs collector current i c - collector current - a -05 -50 -10 v ce(sat) - collector-emitter saturation voltage - v -20 -15 -10 -05 0 tcs115ab t p = 300 s, duty cycle < 2% i b = i c / 100 t c = -40c t c = 25c t c = 100c base-emitter saturation voltage vs collector current i c - collector current - a -05 -50 -10 v be(sat) - base-emitter saturation voltage - v -30 -25 -20 -15 -10 -05 tcs115ac t c = -40c t c = 25c t c = 100c i b = i c / 100 t p = 300 s, duty cycle < 2%
BDW54, BDW54a, BDW54b, BDW54c, BDW54d pnp silicon power darlingtons 4
august 1978 - revised september 2002 specifications are subject to change without notice. maximum safe operating regions figure 4. thermal information figure 5. maximum forward-bias safe operating area v ce - collector-emitter voltage - v -10 -10 -100 -1000 i c - collector current - a -0.01 -01 -10 -10 sas115ac BDW54 BDW54a BDW54b BDW54c BDW54d maximum power dissipation vs case temperature t c - case temperature - c 0 255075100125150 p tot - maximum power dissipation - w 0 10 20 30 40 50 60 tis110ab
|
